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TCET1600 up to TCET4600
Vishay Telefunken
Optocoupler with Phototransistor Output
Description
The TCET1600/ TCET2600/ TCET4600 consists of a phototransistor optically coupled to 2 gallium arsenide infrared-emitting diodes in a 4-lead up to 16-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements.
Applications
Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation):
14925
D For appl. class I - IV at mains voltage 300 V D For appl. class I - III at mains voltage 600 V
according to VDE 0884, table 2, suitable for:
Coll. Emitter
Computer peripheral interface, microprocessor system interface, telecom equipment.
These couplers perform safety functions according to the following equipment standards:
D VDE 0884
Optocoupler for electrical safety requirements
Anode Cath. 4 PIN 8 PIN 16 PIN
D IEC 950/EN 60950
Office machines (applied for reinforced isolation for mains voltage 400 VRMS)
D VDE 0804
Telecommunication apparatus and data processing
D IEC 65
Safety for mains-operated electronic and related household apparatus
C
Order Instruction
Ordering Code CTR Ranking TCET1600/ TCET1600G1) >20% TCET2600 >20% TCET4600 >20% 1) G = Leadform 10.16 mm; G is not market on the body Remarks 4 Pin = Single channel 8 Pin = Dual channel 16 Pin = Quad channel
Rev. A4, 11-Jan-99
253
13947
VDE Standards
TCET1600 up to TCET4600
Vishay Telefunken Features
Approvals:
D Creepage current resistance according to
VDE 0303/IEC 112 Comparative Tracking Index: CTI 175 D Thickness though insulation 0.75 mm D Internal creepage distance > 4 mm
D BSI: BS EN 41003, BS EN 60095 (BS 415),
BS EN 60950 (BS 7002), Certificate number 7081 and 7402
D FIMKO (SETI): EN 60950,
Certificate number 11027
D Underwriters Laboratory (UL) 1577 recognized,
file number E-76222 - Double Protection
General features:
D CSA (C-UL) 1577recognized,
file number E-76222 - Double Protection
D VDE 0884, Certificate number 115667
VDE 0884 related features:
D Isolation materials according to UL94-VO D Pollution degree 2
(DIN/VDE 0110 /resp. IEC 664)
D Rated impulse voltage (transient overvoltage)
VIOTM = 8 kV peak D Isolation test voltage (partical discharge test voltage) Vpd = 1.6 kV peak D Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak) D Rated recurring peak voltage (repetitive) VIORM = 600 VRMS
D Climatic classification 55/100/21 (IEC 68 part 1) D Special construction:
Therefore, extra low coupling capacity of typical 0.2 pF, high Common Mode Rejection D Low temperature coefficient of CTR D G = Leadform 10.16 mm; provides creepage distance > 8 mm, for TCET2600/ TCET4600 optional; suffix letter `G' is not marked on the optocoupler D Coupling System U
Absolute Maximum Ratings
Input (Emitter)
Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions Symbol VR IF IFSM PV Tj Symbol VCEO VECO IC ICM PV Tj Symbol VIO Ptot Tamb Tstg Tsd Value 6 60 1.5 100 125 Unit V mA A mW C
tp 10 ms Tamb 25C
Output (Detector)
Parameter Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature Test Conditions Value 70 7 50 100 150 125 Unit V V mA mA mW C Unit kV mW C C C
tp/T = 0.5, tp 10 ms Tamb 25C
Coupler
Parameter Test Conditions Isolation test voltage (RMS) t = 1 min Total power dissipation Tamb 25C Operating ambient temperature range Storage temperature range Soldering temperature 2 mm from case t 10 s Value 5 250 -40 to +100 -55 to +125 260
254
Rev. A4, 11-Jan-99
TCET1600 up to TCET4600
Vishay Telefunken Electrical Characteristics (Tamb = 25C)
Input (Emitter)
Parameter Forward voltage Junction capacitance Test Conditions IF = 50 mA VR = 0 V, f = 1 MHz Symbol VF Cj Min. Typ. 1.25 50 Max. 1.6 Unit V pF
Output (Detector)
Parameter Collector emitter voltage Emitter collector voltage Collector dark current Test Conditions IC = 100 mA IE = 100 mA VCE = 20 V, If = 0, E = 0 Symbol VCEO VCEO ICEO Min. 70 7 Typ. Max. Unit V V nA
100
Coupler
Parameter Collector emitter saturation voltage Cut-off frequency Coupling capacitance Test Conditions IF 10 mA, IC = 1 mA VCE = 5 V, IF 10 mA, RL = 100 W f = 1 MHz Symbol VCEsat fc Ck Min. Typ. Max. 0.3 Unit V kHz pF
100 0.3
Current Transfer Ratio (CTR)
Parameter IC/IF Test Conditions VCE = 5 V, IF = 5 mA Type TCET1600 up to TCET4600 Symbol CTR Min. 0.20 Typ. Max. 3.0 Unit
Rev. A4, 11-Jan-99
255
TCET1600 up to TCET4600
Vishay Telefunken Maximum Safety Ratings (according to VDE 0884) see figure 1
This device is used for protective separation against electrical shock only within the maximum safety ratings. This must be ensured by using protective circuits in the applications.
Input (Emitter)
Parameters Forward current Test Conditions Symbol Isi Value 130 Unit mA
Output (Detector)
Parameters Power dissipation Test Conditions Tamb 25C Symbol Psi Value 265 Unit mW
Coupler
Parameters Rated impulse voltage Safety temperature Test Conditions Symbol VIOTM Tsi Value 8 150 Unit kV C
Insulation Rated Parameters (according to VDE 0884)
Parameter Test Conditions Partial discharge test voltage - 100%, ttest = 1 s Routine test Partial discharge test voltage - tTr = 60 s, ttest = 10 s, g g Lot test (sample test) (see figure 2) Insulation resistance VIO = 500 V VIO = 500 V, Tamb = 100C VIO = 500 V, Tamb = 150C
(construction test only) 300
V VIOTM t1, t2 = 1 to 10 s t3, t4 = 1 s ttest = 10 s tstres = 12 s VPd
Symbol Vpd VIOTM Vpd RIO RIO RIO
Min. 1.6 8 1.3 10 12 10 11 10 9
Typ.
Max.
Unit kV kV kV
W W W
- Total Power Dissipation ( mW )
250 200 150 100 50 0 0 25 50 IR-Diode Isi ( mA )
Phototransistor Psi ( mW )
VIOWM VIORM
P
tot
0
t3 ttest t4 t1 tTr = 60 s t2 tstres t
75
100
125
150
13930
94 9182
Tsi - Safety Temperature ( C )
Figure 1. Derating diagram
Figure 2. Test pulse diagram for sample test according to DIN VDE 0884
256
Rev. A4, 11-Jan-99
TCET1600 up to TCET4600
Vishay Telefunken Switching Characteristics
Parameter Delay time Rise time Turn-on time Storage time Fall time Turn-off time Turn-on time Turn-off time Test Conditions VS = 5 V, IC = 2 mA, RL = 100 W ( (see figure 3) g ) Symbol td tr ton ts tf toff ton toff Typ. 3.0 3.0 6.0 0.3 4.7 5.0 9.0 10.0 Unit
VS = 5 V, IF = 10 mA, RL = 1 kW ( (see figure 4) g )
ms ms ms ms ms ms ms ms
0 RG = 50W tp T = 0.01 tp = 50 ms
IF
IF
+5V IC = 2 mA ; adjusted through input amplitude IF 0 tp IC Channel I Channel II Oscilloscope RL > 1 MW CL < 20 pF 100% 90%
96 11698
t
50 W
13343
100 W
Figure 3. Test circuit, non-saturated operation
10% 0 tr td ts toff pulse duradelay time rise time turn-on time ts tf toff (= ts + tf) tf
t
0 RG = 50 W tp T = 0.01 tp = 50 ms
IF
IF = 10 mA
+5V IC tp tion td tr ton (= td + tr)
ton
storage time fall time turn-off time
Channel I Channel II 1 kW
Oscilloscope RL > 1 MW CL < 20 pF
50 W
13344
Figure 4. Test circuit, saturated operation
Figure 5. Switching times
Rev. A4, 11-Jan-99
257
TCET1600 up to TCET4600
Vishay Telefunken Typical Characteristics (Tamb = 25_C, unless otherwise specified)
300 P tot - Total Power Dissipation ( mW ) Coupled device 250 200 Phototransistor 150 IR-diode 100 50 0 0
96 11700
10000 ICEO- Collector Dark Current, with open Base ( nA ) VCE=20V IF=0 1000
100
10
1 40 80 120
95 11026
0
25
50
75
100
Tamb - Ambient Temperature ( C )
Tamb - Ambient Temperature ( C )
Figure 6. Total Power Dissipation vs. Ambient Temperature
1000.0 IC - Collector Current ( mA )
Figure 9. Collector Dark Current vs. Ambient Temperature
100 VCE=5V 10
I F - Forward Current ( mA )
100.0
10.0
1
1.0
0.1
0.1 0
96 11862
0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF - Forward Voltage ( V )
95 11027
0.1
1
10
100
IF - Forward Current ( mA )
Figure 7. Forward Current vs. Forward Voltage
CTR rel - Relative Current Transfer Ratio 2.0
Figure 10. Collector Current vs. Forward Current
100 IC - Collector Current ( mA )
VCE=5V IF=5mA 1.5
20mA IF=50mA 10 10mA 5mA 2mA 1mA 0.1
1.0
1
0.5
0 -25
95 11025
0
25
50
75
95 10985
0.1
1
10
100
Tamb - Ambient Temperature ( C )
VCE - Collector Emitter Voltage ( V )
Figure 8. Relative Current Transfer Ratio vs. Ambient Temperature
Figure 11. Collector Current vs. Collector Emitter Voltage
258
Rev. A4, 11-Jan-99
TCET1600 up to TCET4600
Vishay Telefunken
V CEsat - Collector Emitter Saturation Voltage ( V ) 1.0 20% 0.8 CTR=50% 0.6 50 Saturated Operation VS=5V RL=1kW
t on / t off - Turn on / Turn off Time ( m s )
40
30 toff 20 10 0 ton 0 5 10 15 20
0.4 0.2 0 1 10 IC - Collector Current ( mA ) 100
10%
95 11028
95 11031
IF - Forward Current ( mA )
Figure 12. Collector Emitter Saturation Voltage vs. Collector Current
1000 CTR - Current Transfer Ratio ( % ) VCE=5V 100
Figure 14. Turn on / off Time vs. Forward Current
t on / t off - Turn on / Turn off Time ( m s )
10 Non Saturated Operation VS=5V RL=100W
8
ton
6 toff 4 2 0
10
1 0.1
95 11029
1
10
100
95 11030
0
2
4
6
10
IF - Forward Current ( mA )
IC - Collector Current ( mA )
Figure 13. Current Transfer Ratio vs. Forward Current Pin 1 Indication Type
Figure 15. Turn on / off Time vs. Collector Current
ET1600 820UTK63
15082
Date Code (YM)
Coupling System Indicator
Company Logo
Production Location
Figure 16. Marking example
Rev. A4, 11-Jan-99
259
TCET1600 up to TCET4600
Vishay Telefunken Dimensions of TCET1600 in mm
weight: creepage distance: air path:
y y
ca. 0.25 g 6 mm 6 mm
after mounting on PC board
14789
Dimensions of TCET1600G in mm
weight: creepage distance: air path:
y y
ca. 0.25 g 8 mm 8 mm
after mounting on PC board
14792
260
Rev. A4, 11-Jan-99
TCET1600 up to TCET4600
Vishay Telefunken Dimensions of TCET2600 in mm
weight: creepage distance: air path:
y y
ca. 0.55 g 6 mm 6 mm
after mounting on PC board
14784
Dimensions of TCET4600 in mm
14784
weight: creepage distance: air path:
y y
ca. 1.0 g 6 mm 6 mm
after mounting on PC board
14783
Rev. A4, 11-Jan-99
261

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